Modulation of the Optical Absorption in Self-Organized InAs/GaAs Quantum Dots

Abstract

Capacitance and photocurrent spectroscopy are used to investigate a Schottky barrier structure containing a single layer of self-organized InA/ GaAs quantum dots. We show that applying a bias to the structure it is possible to change the electron occupation of the dot levels. This in turns is used for controlling the intensity of the light absorbed by the dots and proposed as a novel way for realizing optical modulators operating in the infrared (^ 1.1 micrometer) wavelength range.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013234

Entities

People

  • A. Levin
  • A. Patane
  • L. Eaves
  • P. C. Main
  • P. N. Brunkov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Conduction Bands
  • Electron Diffraction
  • Electron Energy
  • Electron Microscopy
  • Electrons
  • Energy Bands
  • Energy Levels
  • Ground State
  • Modulation
  • Optical Absorption
  • Optical Modulators
  • Optoelectronic Devices
  • Quantum Dots
  • Spectroscopy
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots