Spontaneous Magnetization in Single and Coupled Quantum Dots

Abstract

Spontaneous magnetization of single and coupled quantum dots formed by lateral confinement of a high-mobility two-dimensional electron gas is studied for a realistic semiconductor heterostructure. The modeling of the device takes into account contributions from a patterned gate doping, surface states and mirror charges. To explore the magnetic properties we use the Kohn- Sham local spin-density formalism including the contributions from electron correlation as well as from exchange. We show, however by explicit calculations that the exchange is the dominant mechanism driving a spontaneous magnetization of a dot. Single dots and pairs of dots with up to about 50 electrons per dot have been studied. The question of very large dots is also addressed briefly.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013239

Entities

People

  • A. M. Bychkov
  • I. I. Yakimenko
  • K. F. Berggren

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electron Gas
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Fermi Levels
  • Information Processing
  • Magnetic Properties
  • Magnetization
  • Polarization
  • Quantum Computing
  • Quantum Dots
  • Quantum Information
  • Quantum Wires
  • Semiconductors
  • Spintronics
  • Technical Information Centers
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots