Resonant Tunnelling via States of the X-Related Donors Located at Different Atomic Layer in AlAs Barrier

Abstract

We report an electrical transport and magnetotransport study of GaAs/AlAs/ GaAs single- barrier heterostructures incorporating unintentional donors in the barrier. Resonant tunneling was observed both through the quasiconfined states in the AlAs layer originated from the X(xy) and X(z) conduction band minima and through two distinct states of the donors bound to the X(xy) and X(z) valleys. Furthermore we observed an additional oscillatory like fine structure of the donor resonances that we attribute to difference in binding energies of donors located at different position of the AlAs layer. Magnetic field behaviour of the fine structure demonstrated that the binding energy of X-related donors has an essential dependence on both magnetic field and donor position in the barrier.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013242

Entities

People

  • E. E. Vdovin
  • Yu. N. Khanin
  • Yu. V. Dubrovskii

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Conduction Bands
  • Electrical Properties
  • Energy Bands
  • Ground State
  • Hard Copy
  • Heterojunctions
  • Impurities
  • Magnetic Fields
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Monomolecular Films
  • Nanostructures
  • Quantum Wells
  • Resonance
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.