The New Approach to the Single-Electron Electrometer Design
Abstract
We report on new two types of single electron tunneling (SET) transistor elecnometer. Both trlansistor types comprised two chains of tunnel junctions instead of two single junctions. In the first case (Type I) the role ofjunctions plays the shadow evaporated chains of stack tunnel Al/AlO(x)/Al junctions with an island in benveen. In the second case (Type II) there were two highly resistive Cr thin film strips (about 1 micromater long) connecting a 1 micromaeter long Al island to two Al outer electrodes. Our transistor demonstrated very sharp Coulomb blockade and reproducible, deep and strictly e-periodic gate modulation in wvide ranges of bias currents I and gate voltages V(g). In the Coulomb blockade region ( \V\ < or = about 0.5 mV) we observed strong suppression of cotunneling current enabling to measure appreciable modulation curves V (V(g)) at current I as low as 100 fA (Type II transistor). The noise figure of our SET transistors was found to be similar to that of typical Al/AlO(x)/Al SET transistors. viz. delta(Q(x) approx. = A' 3.5/5 x 10(exp-4)e/ sq.rt.Hz at 10 Hz.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP013243
Entities
People
- A. B. Zorin
- D. E. Presnov
- J. Niemeyer
- M. N. Savvateev
- V. A. Krupenin
Organizations
- Moscow State University