Nanostructure Effect in Si-MOSFETs
Abstract
In this article we present a summary of the most important critical issues in nano-scaled field-effect transistors. The controversial issue of alloy scattering and the phenomenon of velocity overshoot which are important in the nano-scale regime are reviewed and discussed. The emerging Si(1-x)Ge(x) technology contribution to improve scaled Si MOSFETs is presented. Achievements and problems associated with channel engineering and alterative gate electrodes and high-k dielectric materials are also addressed. Finally during the presentation we will discuss our results on filtering out hot carriers using channel engineering. We will also discuss our results on scaling down the MOS transistor to a single electron tunneling MOS transistor made in Si and with properties like room temperature Coloumb oscillations.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP013267
Entities
People
- M. Willander
- M. Y. Yousif
- O. Nur
Organizations
- Chalmers University of Technology