Room-Temperature Operation of GaInAs/InP Based Ballistic Rectifiers at Frequencies Up to 50 GHz

Abstract

Ballistic rectifiers are realized in high-mobility GaInAs/InP quantum well materials using electron beam lithography and wet chemical etching. The devices are made small enough to function even at room temperature. Furthermore, we demonstrate that the devices operate at frequencies at least up to 50 GHz.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013268

Entities

People

  • A. M. Song
  • I. Samuelson
  • I. Shorubalko
  • P. Omling
  • W. Seifert

Organizations

  • Lund University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Etching
  • Electron Beam Lithography
  • Electron Beams
  • Electron Gas
  • Electron Mobility
  • Electron Scattering
  • Electrons
  • Fabrication
  • Frequency
  • Materials
  • Mean Free Path
  • Mobility
  • Physics
  • Quantum Wells
  • Rectifiers
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Nanofabrication and Microfabrication.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing