New Quantum Dot Transistor

Abstract

Modulation doped N-AlGaAs/GaAs/InAs/GaAs/InAs/GaAs heterosturtures with InAs-quantum dots in device channel have been grown and investigated. Their photoluminescence spectra and electrical transport properties both in low and high electric fields were studied. Using these structures modulation doped FET's have been fabricated and analyzed. It was demonstrated that the quantum dot FET's present the new type of the hot electron devices promising for high speed applications.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013269

Entities

People

  • L. E. Velikovski
  • M. Yu. Scherbakova
  • V. G. Mokerov
  • Yu. V. Fedorov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electric Fields
  • Electrical Properties
  • Electron Density
  • Electron Emission
  • Electron Mobility
  • Electrons
  • Emission
  • Field Effect Transistors
  • Free Electrons
  • Hall Effect
  • High Electron Mobility Transistors
  • Nanostructures
  • Photoexcitation
  • Quantum Dots
  • Transistors
  • Transport Properties
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing