Large Increase of Electron Mobility in a Modulation-Doped AlGaAs/GaAs/AlGaAs Quantum Well with an Inserted Thin AlAs Barrier

Abstract

The electron (polar optical (PO)) phonon scattering mechanisms which determine the electron mobility in a Al(0.25)Ga(0.75) As/GaAs/Al(0.25) Ga(0.75). As quantum well (QW) with an inserted thin AlAs barrier are considered. It is shown that the decrease of the second subband electron scattering by PO-phonon emission is responsible for the large increase of the mobility in the QW with the inserted barrier.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013276

Entities

People

  • J. Poleza
  • K. Pozela
  • V. Juciene

Organizations

  • Semiconductor Physics Institute

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Conductivity
  • Electron Energy
  • Electron Gas
  • Electron Mobility
  • Electron Scattering
  • Electron Transitions
  • Electrons
  • Emission
  • Energy
  • Mobility
  • Phonons
  • Photoexcitation
  • Quantum Wells
  • Relaxation Time
  • Scattering
  • Semiconductor Physics

Fields of Study

  • Materials science

Readers

  • Marine Ecotoxicology
  • Mathematics or Statistics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing