Analog of the Gunn Effect in Heterostructure with Two Tunnel-Coupled Quantum Well

Abstract

Electron transport in heterostructure with two tunnel-coupled quantum well has been numerically investigated under condition of strong non-one-dimensionality of electric field in the structure. It is shown for the first time an ability of the effect in such heterostructures which is similar to the Gunn effect in bulk semiconductor. The effect is conditioned by the electron tunneling transition between quantum wells with different mobility and is characterized by formation of the strong field domain and the negative differential conductivity region on current-voltage characteristic.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013277

Entities

People

  • A. A. Gorbatsevich
  • P. I. Biryulin
  • Yu. V. Kopaev

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Bulk Semiconductors
  • Conductivity
  • Diffusion Coefficient
  • Electric Fields
  • Electron Mobility
  • Electrons
  • Equations
  • Gunn Effect
  • Heterojunctions
  • Magnetic Fields
  • Mobility
  • Quantum Wells
  • Scattering
  • Semiconductors
  • Technical Information Centers
  • Tunnels
  • Wave Functions

Fields of Study

  • Materials science

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing