Disordered Quasi-2D Semiconductor Structures: Percolation, Non-Coherent Mesoscopics, and Conductance Quantization

Abstract

The electron effective state density N(ss) and dependence of the h(omega(x)) vs the Fermi energy have been also analyzed. As we have found out the state density doesn't have any noticeable energy dependence and N(ss) ^ 2m/ph(2), while the parameter h(omega(x)) rapidly drops from 100 meV down to 1 meV with the Fermi energy decreasing. The latter means that reducing of the FP screening leads to the saddle transformation into the narrow and long ballistic channel and thus detemines the conductance behavior vs the gate voltage and temperature.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013279

Entities

People

  • A. B. Davydov
  • A. S. Vedeneev
  • D. A. Bakaushin
  • N. K. Chumakov
  • Б. А. Аронзон

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Computer Simulations
  • Electric Fields
  • Electronics
  • Electrons
  • Fermi Levels
  • Hall Effect
  • High Temperature
  • Low Temperature
  • Magnetic Fields
  • Nanostructures
  • Percolation
  • Semiconductors
  • Simulations
  • Technical Information Centers
  • Transport Properties
  • Transport Ships

Fields of Study

  • Physics

Readers

  • Mathematics or Statistics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene