Persistent Photoconductivity in P-Type Al0.5Ga0.5/GaAs/Al0.5Ga0.5As Heterostructures

Abstract

Illumination of a double p - Al(0.5)Ga(0.5)As/GaAs/Al(0.5)Ga(0.5)As heterostructure by a red light emitting diode results in a negative photoconductivity that, after the diode is switched off, slowly relaxes to a positive persistent photoconductivity characterized by about 1.5 increase of a two-dimensional hole concentration. This metastable state may be explained in a framework of the model in which deep electron traps are supposed to be located above the Fermi level on the inverted heterointerface.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013282

Entities

People

  • A. A. Ilyevsky
  • A. M. Savin
  • I. V. Berman
  • N. Ya. Minina
  • W. Kraak

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Conduction Bands
  • Conductivity
  • Diodes
  • Electric Fields
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Hall Effect
  • Hard Copy
  • Heterojunctions
  • Illumination
  • Light Emitting Diodes
  • Photoconductivity
  • Quantum Wells
  • Technical Information Centers
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics