A Comparative Study of QD and Nitrogen-Based 1.3 mu m VCSELs

Abstract

We study two types of GaAs-based heterostructures (InAs/InGaAs quantum dots and InGaAsN quantum wells) designed for 1.3 micrometers vertical-cavity surface-emitting lasers (VCSELs) and compare different device designs. A correlation between properties of the active region and parameters of the optical microcavity required for lasing was found and investigated. The comparative analysis of the vertical-cavity surface-emitting lasers with either InAs/InGaAs quantum dots or InGaAsN quantum wells active region operating in continuous wave regime at room temperature was done. Optimization of the optical microcavity provides the internal round-trip optical loss less than 0.05%.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013287

Entities

People

  • A. E. Zhukov
  • A. P. Vasil'ev
  • A. R. Kovsh
  • A. Yu. Egorov
  • N. A. Maleev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Continuous Waves
  • Current Density
  • Distributed Bragg Reflectors
  • Gain
  • Ground State
  • Laser Diodes
  • Lasers
  • Long Wavelengths
  • Losses
  • Materials
  • Optical Fibers
  • Optical Properties
  • Optoelectronic Devices
  • Quantum Dots
  • Quantum Efficiency
  • Quantum Wells
  • Surface Emitting Lasers

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Quantum Computing