Kinetic Processes in Unipolar Semiconductor Lasers on Asymmetric Quantum Wells

Abstract

Kinetic processes in an unipolar semiconductor laser on asymmetric quantum wells are described. An active element of the semiconductor laser structure, first tuned up from a quantum-mechanical point of view, is now optimized with taking into account generation-recombination processes to achieve a maximum of the population inversion. The value of the population inversion is calculated as well as subband electron concentrations. Some ways for an advancement of the laser parameters is proposed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013288

Entities

People

  • N. V. Kornyakov
  • V. V. Kapaev
  • Yu. V. Kopaev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Crystal Lattice Vibrations
  • Electron Energy
  • Electron Transitions
  • Electrons
  • Elements
  • Energy
  • Energy Bands
  • Inversion
  • Lasers
  • Optical Pumping
  • Optoelectronic Devices
  • Phonons
  • Quantum Wells
  • Relaxation Time
  • Semiconductor Lasers
  • Semiconductors
  • Transitions

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics
  • Quantum Computing