Fine Structure of Excitrons and E-H Pairs in GaAs/AlAs Superlattices at the Chi-Gamma Crossover

Abstract

Optically detected magnetic resonance (ODMR) and level anticrossing spectroscopy was applied to study g-factors and exchange splitting of localized excitons and e-h pairs at the X(z) - Gamma crossover of the conduction band states in a GaAs/AlAs superlattice with a composition gradient. In the transition region we clearly observed disappearance of type II excitons and appearance of type I excitons. In addition "intermediate" type-II-like and type-I-like excitons were found by ODMR and LAC. Besides ODMR of excitons with a definite fine structure splitting ODMR ascribed to separately localized electrons and holes with a distribution of exchange splittings was detected.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013291

Entities

People

  • N. G. Romonov
  • P. G. Baranov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Band Structures
  • Bulk Materials
  • Circular Polarization
  • Conduction Bands
  • Electrons
  • Energy Bands
  • Excitons
  • Frequency
  • Luminescence
  • Magnetic Fields
  • Magnetic Resonance
  • Resonance
  • Splitting
  • Superlattices
  • Technical Information Centers
  • Transitions
  • Valence Bands

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics