Localized Excitons in Random and Partly Phase Separated Solid Solutions: Evidence of Fractal Structure of Islands

Abstract

Temperature dependence of photoluminescence (PL) spectra of MBE grown ZnSe/CdSe/ZnSe QWs with 0.3-1.5 ML nominal CdSe thicknesses as well as MOCVD grown double heterostructures (DHS) GaN/InGaN/GaN with In content in the range 0.004-0.06 within the temperature interval 2-300 K has been studied. Much in common has been found in the PL band temperature behavior for both systems. Depending on the concentration of the solid solution the PL band maximum position epsilon (photoluminescence(max)( T) follows either "normal" or "anomalous" (known as "S-shape") dependence. We consider both dependances in detail and argue that anomalous behavior is caused by the fractal-like structure of the islands.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013292

Entities

People

  • A. Klochikhin
  • A. Reznitsky
  • L. Tenishev
  • S. Permogorov
  • S. Sorokin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Archipelagoes
  • Band Gaps
  • Bulk Materials
  • Crystal Lattice Vibrations
  • Energy Bands
  • Energy Levels
  • Excitons
  • Ground State
  • Islands
  • Low Temperature
  • Metastable State
  • Nanostructures
  • Phase
  • Phase Separation
  • Solid Solutions
  • Spectra
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics