Effect of Additional Illumination on the Kinetics of Exciton Complex Formation in the Quantum Wells of Undoped GaAs/AlGaAs Structures
Abstract
Low-temperature (T = 2K) photoluminescence (PL) and photoluminescence excitation (PLE) spectra of GaAs/ AlGaAs (x = 0.05) structures with shallow quantum wells (QW) and the effect of additional illumination by He-Ne laser radiation on these spectra were investigated. It was found that the PLE spectra exhibit a number of broad bands in the above-barrier energy region; these bands alternate "in opposite phases" in the spectra of free excitons and excitonic complexes (trions) (i.e., an increase in the exciton luminescence intensity is accompanied by a decrease in the luminescence intensity of the complexes). In the case where the photon energy of the Ti-sapphire laser is tuned to excite the QW states additional illumination results in the shift of the equilibrium in the exciton-trion system towards an increase in the concentration of the latter species. On the other hand upon excitation into certain barrier states with energy both below and above the barrier band gap additional illumination shifts the equilibrium in the opposite direction.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP013293
Entities
People
- M. L. Skorikov
- N. N. Sibeldin
- V. A. Tsvetkov
Organizations
- Russian Academy of Sciences