Linearly-Polarized Optical Transitions at Type-II Interfaces in the Tight-Binding Approach

Abstract

The sp(3) tight-binding method has been applied to calculate the in-plane anisontropy of optical matrix elements for indirect electron-hole radiative recombination at a type-II interface. It has been shown that in type-II heterostructures with large band off-sets the linear polarization of the photoluminescence vary in a wide range including values ^100% as a function of the tight-binding parameters characterizing the interface cations and anions. The behaviour of electron and hole quantum-confined states near the interface and their overlap has been analyzed as well.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013298

Entities

People

  • E.. L. Ivchenko
  • M. O. Nestoklon

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Atomic Orbitals
  • Band Gaps
  • Bulk Semiconductors
  • Chemical Bonds
  • Conduction Bands
  • Coordinate Systems
  • Electrons
  • Energy Bands
  • Linear Polarization
  • Materials
  • Polarization
  • Semiconductors
  • Technical Information Centers
  • Transitions
  • Valence
  • Valence Bands
  • Wave Functions

Fields of Study

  • Materials science
  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing