Delta-Layer Quenched High-Frequency Conductivity in GaAs/AlGaAs Heterostructures: Acoustical Studies
Abstract
Electron density and high-frequency (hf) hopping conductivity of two-dimensional electron gas (2DEG) in SI delta-doped GaAs/AlGaAs heterostructures are studied by acoustic methods. In the quantum Hall regime at small filling factors both quantities appear dependent on the cooling procedure characterized by an initial temperature T (o) of a fast cooling to 4.2 K by immersing into liquid He. These facts are interpreted assuming that T (o) is the freezing temperature for the conductivity of the delta-layer which supplies electrons to 2D channel.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP013303
Entities
People
- A. M. Diakonov
- A. V. Patsekin
- I. L. Drichko
- I. Yu. Smirnov
- Yu. M. Galgerin
Organizations
- Russian Academy of Sciences