The Role of doped Layers in Dephasing of 2D Electrons in Quantum Well Structures

Abstract

The temperature and gate voltage dependencies of the phase breaking time is studied experimentally in the structures with quantum well based on GaAs/InGaAs. There is shown that arising of the states at the Fermi energy in the doped layers (Sn & layer in our case) leads to significant decreasing of the phase breaking time and to weakness its temperature dependence.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP013307

Entities

People

  • A. V. Germanenko
  • B. N. Zvonkov
  • E. A. Uskova
  • G. M. Minkov
  • O. E. Rut

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Applied Mathematics
  • Channel Capacity
  • Conductivity
  • Electron Density
  • Electron Electron Interactions
  • Electron Gas
  • Electrons
  • Experimental Data
  • Fermi Levels
  • Hall Effect
  • Hard Copy
  • Magnetic Fields
  • Mathematics
  • Mean Free Path
  • Quantum Wells
  • Relaxation Time
  • Technical Information Centers

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing