Characteristics Analysis of SAW Filter Using Al(0.36)Ga(0.64)N Thin Film

Abstract

Al(x)Ga(1-x)N sample with x=0.36 was epitaxially grown on sapphire by MOCVD. SAW velocity of 5420 m/s and TCF (temperature coefficient of frequency) of -51.20 ppm/deg C were measured from the SAW devices fabricated on the Al(x)Ga(1-x)N sample, when kh value was 0.078, at temperatures between -30 deg C and 60 deg C. Electro-mechanical coupling coefficient was ranged from 1.26 % to 2.22 %. The fabricated SAW filter have shown a good device performance with insertion loss of -33.853 dB and side lobe attenuation of 20 dB.

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Document Details

Document Type
Technical Report
Publication Date
Apr 03, 2003
Accession Number
ADP013348

Entities

People

  • Cheol-yeong Jang
  • Hyun-chul Choi
  • Jung-hee Lee
  • Min-jung Park
  • Sun-ki Kim

Organizations

  • Kyungpook National University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Acoustic Waves
  • Coefficients
  • Computer Science
  • Electron Microscopy
  • Films
  • Frequency
  • Frequency Response
  • Insertion Loss
  • Losses
  • Materials
  • Scanning Electron Microscopy
  • Surface Acoustic Wave Devices
  • Surface Acoustic Waves
  • Temperature Coefficients
  • Thin Films
  • X Rays

Readers

  • Materials Science and Engineering.
  • Phased Array Antenna Design.
  • Semiconductor Device Technology