Characteristics Analysis of SAW Filter Using Al(0.36)Ga(0.64)N Thin Film
Abstract
Al(x)Ga(1-x)N sample with x=0.36 was epitaxially grown on sapphire by MOCVD. SAW velocity of 5420 m/s and TCF (temperature coefficient of frequency) of -51.20 ppm/deg C were measured from the SAW devices fabricated on the Al(x)Ga(1-x)N sample, when kh value was 0.078, at temperatures between -30 deg C and 60 deg C. Electro-mechanical coupling coefficient was ranged from 1.26 % to 2.22 %. The fabricated SAW filter have shown a good device performance with insertion loss of -33.853 dB and side lobe attenuation of 20 dB.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 03, 2003
- Accession Number
- ADP013348
Entities
People
- Cheol-yeong Jang
- Hyun-chul Choi
- Jung-hee Lee
- Min-jung Park
- Sun-ki Kim
Organizations
- Kyungpook National University