RF Sputtered BZN Pyrochlore Thin Films for Voltage Tunable Dielectric Device Applications

Abstract

The BZN pyrochlore thin films were prepared on platinized Si substrates using a reactive RF magnetron sputtering. The structures, surface morphologies, dielectric properties and voltage tunable properties of films with deposition parameters were investigated. The BZN thin films have a cubic pyrochlore phase and secondary phases of zinc niobate, bismuth niobate when crystallized at 600 deg C ^ 800 deg C. The dielectric constant and tunability of thin films are O2/Ar ratio and post-annealing temperature dependent. The BZN thin films sputtered in 15% O2 and annealed at 700 deg C had a dielectric constant of 153, tan delta of ^0.003 and maximum tunability of 14% at 1,000kV/cm.

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Document Details

Document Type
Technical Report
Publication Date
Apr 03, 2003
Accession Number
ADP013352

Entities

People

  • Ha Yong Lee
  • Kyung Hyun Ko
  • Seok Ha
  • Young Cheol Lee
  • Young Pyo Hong

Organizations

  • Seoul National University

Tags

DTIC Thesaurus Topics

  • Crystal Structure
  • Dielectric Permittivity
  • Dielectric Properties
  • Dielectrics
  • Electron Microscopy
  • Engineered Materials
  • Engineering
  • Films
  • Grain Size
  • Materials
  • Materials Science
  • Measurement
  • Metamaterials
  • Microwaves
  • Scanning Electron Microscopy
  • Thin Films
  • Universities

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.