Comparison of Microwave Dielectric Properties of between (001) and (011) Ferroelectric Ba(1-x)Sr(x)TiO3 Thin Films Grown by Pulsed Laser Deposition
Abstract
The effects of anisotropic dielectric properties of ferroelectric Ba(1-x)Sr(x)TiO3 (BST) films on the characteristics of phase shifter have been studied in microwave regions at room temperature. Ferroelectric BST films with (001) and (011) orientation were epitaxially grown on (001) and (011) MgO substrates, respectively, by pulsed laser deposition method. The structures of BST films were investigated using x-ray diffraction measurement. The microwave properties of orientation engineered BST films were investigated using coplanar waveguide transmission lines that were fabricated on BST films using a thick metal layer by photolithography and etching process. The measured differential phase shift and insertion loss (S sub 21) for (011) BST films are larger than those for (001) BST films. Dielectric constants of the ferroelectric BST films are calculated from the measured S sub 21 using a modified conformal-mapping model.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 03, 2003
- Accession Number
- ADP013353
Entities
People
- Eun-kyoung Kim
- Seok-kil Han
- Seung Eon Moon
- Su-jae Lee