Deposition of Polycrystalline ZnO Films by Two-Step Method and Characterization of Thermal Annealing Effects

Abstract

Polycrystalline ZnO thin films were deposited on SiO2/Si(100) substrate using RF magnetron sputtering. The film deposition performed in this work was composed of following two procedures; the 1st deposition for 30 min without oxygen at 100 W and the 2nd deposition with oxygen in the range O2(Ar+O2) = 10 ^ 50 %. Deposited ZnO films revealed a strongly c-axis preferred-orientation (the corresponding texture coefficient ^100 %) as well as a high resistivity (> 10 (exp 7) Ohm cm). It was also observed that the crystallite size of ZnO was noticeably increased by thermal-annealing.

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Document Details

Document Type
Technical Report
Publication Date
Apr 03, 2003
Accession Number
ADP013356

Entities

People

  • Hye-jung Lee
  • Jin-bock Lee
  • Jin-seok Park
  • Myung-ho Lee

Organizations

  • Hanyang University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Acoustic Resonators
  • Acoustic Waves
  • Advanced Materials
  • Annealing
  • Carrier Mobility
  • Crystal Structure
  • Crystallites
  • Electrical Engineering
  • Electronic Materials
  • Films
  • Materials
  • Polycrystals
  • Raman Spectra
  • Spectra
  • Surface Acoustic Waves
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.