Dielectric and Room Temperature Tunable Properties of Mg-Doped Ba(0.96)Ca(0.04)Ti(0.84)Zr(0.16)O(3) Thin Films on Pt/MgO
Abstract
Mg-doped Ba(0.96)Ca(0.04)Ti(0.84)Zr(0.16)O3 (BCTZ) thin films were fabricated on Pt/MgO substrate by metallorganic decomposition method. The structure of the films were analyzed by x-ray diffraction. The electrical measurements were performed on metal-ferroelectric-metal capacitors with platinum as the top and bottom electrode. The dielectric properties were improved after the capacitors were post annealed at 700 deg C in oxygen atmosphere for 30 min. A high dielectric constant of 504 and a dissipation factor of less than 4% was obtained at 1 MHz. The Pt/BCTZ/Pt/MgO capacitors exhibited high tunability of 55% at an applied field of 55 kV/cm.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 03, 2003
- Accession Number
- ADP013364
Entities
People
- Elliott Philofsky
- Lee Kammerdiner
- T. S. Kalkur
- Woo-chul Yi
Organizations
- University of Colorado, at Colorado Springs