Influence of Covering on Critical Thickness of Strained In(x)Ga(1-x)As Layer
Abstract
This study examined the critical layer thickness (CLT) of mismatched epitaxial layers and strained heterostructures. Samples consisting of In(x)Ga(1-x)As/InP and In(0.52)Al(0.48)As/In(x)Ga(1-x)As/In(0.52)Al(0.48)As/InP were grown on Indium Phosphorus (InP) substrates by low pressure metalorganic vapor phase epitaxy (LP-MOVPE). Atomic force microscopy (AFM) was used to observe misfit dislocation generation. When the layer is buried in the heterostructure, its critical layer thickness increases. These investigations have shown how many times this value may be exceeded in chosen technological conditions. A model was proposed that explains the difference between CLT of Indium Gallium Arsenides (InGaAs) with free surface and CLT of buried InGaAs. Heterostructures mentioned above were employed for producing InAlAs/InGaAs/InP HEMT transistors. (2 tables, 3 figures, 10 refs.)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 03, 2002
- Accession Number
- ADP013778
Entities
People
- Agata Jasik
- Kamil Kosiel
- Marek Wesolowski
- Wlodzimierz Strupinski
Organizations
- Institute of Electronic Materials Technology