MOVPE Technology and Characterisation of Silicon delta-Doped GaAs and A1(x)Ga(1-x)As

Abstract

This work presents the investigation of Metalorganic Vapor Phase Epitaxy (MOVPE) growth of silicon delta-doped Gallium Arsenide (GaAs) and Aluminum Gallium Arsenide (Al(x)Ga(1-x)As) epilayers and different methods used for their characterization. The influence of growth temperature, SiH(4) flow rate and Al(x)Ga(1-x)As composition on delta-doping characteristics is discussed. Properties of the Silicon (Si) delta-doped structures were examined using capacitance-voltage (C-V) measurements, photoreflectance spectroscopy, micro-photoluminescence, micro-Raman spectroscopy, and photocurrent spectroscopy. (5 figures, 9 refs.)

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Document Details

Document Type
Technical Report
Publication Date
Jun 03, 2002
Accession Number
ADP013779

Entities

People

  • B. Paszkiewicz
  • B. Sciana
  • D. Radziewicz
  • M. Tlaczala
  • M. Utko

Organizations

  • Wrocław University of Science and Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Advanced Materials
  • Band Gaps
  • Crystal Lattice Vibrations
  • Electric Fields
  • Electron Density
  • Electrons
  • Energy Bands
  • Flow Rate
  • Metal-Semiconductor Junctions
  • Physics
  • Raman Spectroscopy
  • Semiconductor Devices
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Subatomic Particles
  • Thermal Diffusion

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene