Laterally Overgrown Structures as Substrates for Lattice Mismatched Epitaxy

Abstract

This article provides a general review of epitaxial lateral overgrowth (ELO) technology and of the application of ELO layers as substrates with an adjustable value of lattice constant. In particular, the issues of ELO growth mechanism, substrate defect filtration during ELO procedure, and strain in ELO layers will be addressed. Recent data on Metalorganic Vapor Phase Epitaxy (MOVPE) ELO growth of Gallium Nitride (GaN) on sapphire and the author's results on the lateral overgrowth of Gallium Arsenide (GaAs) on GaAs and Silicon (Si) substrates by Liquid Phase Epitaxy (LPE) are used as examples. Finally, other lateral overgrowth techniques (e.g., growth of lattice mismatched bridge layers and pendeo-epitaxial growth) will be presented and compared with the conventional ELO technique. (12 figures, 49 refs.)

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Document Details

Document Type
Technical Report
Publication Date
Jun 03, 2002
Accession Number
ADP013781

Entities

People

  • Z. R. Zytkiewicz

Organizations

  • Polish Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Diffraction
  • Electron Microscopy
  • Epitaxial Growth
  • Geometry
  • Liquid Phases
  • Materials
  • Microscopy
  • Optical Properties
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Subatomic Particles
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics