Ferromagnetic GaMnAs/GaAs Superlattices - MBE Growth and Magnetic Properties

Abstract

This paper presents the results of a study of the magnetic properties of Gallium Manganese Arsenide/Gallium Arsenide GaMnAs/GaAs) superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 angstroms) and with nonmagnetic GaAs spacers from 4 to 10 ML (11-28 angstroms). While previous reports state that GaMnAs layers thinner than 50 angstroms are paramagnetic in the whole Mn composition range achievable using molecular beam epitaxy (MBE) growth (up to 8% Mn), the authors have found that short period superlattices exhibit a paramagnetic-to-ferromagnetic phase transition with a transition temperature that depends on both the thickness of the magnetic GaMnAs layer and the nonmagnetic GaAs spacer. Neutron scattering experiments have shown that the magnetic layers in superlattices are ferromagnetically coupled for both thin (below 50 angstroms) and thick (above 50 angstroms) GaMnAs layers. (8 figures, 47 refs.)

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Document Details

Document Type
Technical Report
Publication Date
Jun 03, 2002
Accession Number
ADP013788

Entities

People

  • J. Kanski
  • J. Sadowski
  • M. Karlsteen
  • P. Svedlindh
  • R. Mathieu

Organizations

  • Polish Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Diffraction
  • Magnetic Fields
  • Magnetic Properties
  • Magnetometers
  • Materials
  • Materials Science
  • Measurement
  • Phase Transformations
  • Physics
  • Scattering
  • Semiconductors
  • Subatomic Particles
  • Transition Temperature
  • Transitions
  • X Rays
  • Zinc

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Superconducting Magnet Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene