Interface Conduction between Conductive ReO3 Thin Films and NdBa2Cu3O6 Thin Film

Abstract

The Re oxide films were deposited on quartz glasses by RF reactive sputtering from a Re metal target. The lowest resistivity was observed in the film in-situ annealed at 200 deg. C in Ar atmosphere and showed the order of 10(exp -4) Ohm cm of which the value was still about 10 times as large as that of a single crystal ReO3. The temperature dependence of the resistivity revealed a metallic behavior A superconductivity did not take place in the bilayered film of ReO3/NdBa2Cu3O6. In the interface region the resistivity minimum probably caused by the Kondo effect was observed in the neighborhood of 120K.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2003
Accession Number
ADP014255

Entities

People

  • Hiroshi Yamamoto
  • Kohji Matsuo
  • Kumiko Fukai
  • Manabu Ohkubo
  • Nobuyuki Iwata

Organizations

  • Nihon University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Conductivity
  • Crystal Growth
  • Crystals
  • Electron Microscopes
  • Films
  • High Temperature
  • Materials
  • Oxide Films
  • Oxides
  • Phase Transformations
  • Scanning Electron Microscopes
  • Scattering
  • Single Crystals
  • Superconductivity
  • Thin Films
  • Transition Temperature

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.