Magnetoresistance and Hall Effect Characterisation on Magnetic Thin Films Multilayers
Abstract
We have performed both Hall effect, and magnetoresistance measurements on thin films of Permalloy (Py 10 nm) and Py(tPy)/Cu(tCu)/Py(tPy) multilayers deposited on thermally oxidized Si substrates, where tPy=4 and 10 nm and tCu=4 and 8 nm. The measurements were made at room temperature in a setup that allows us to perform both Hall effect and magnetoresistance measurements. The Hall effect measurements were performed varying the angle, change in phase angle, between the magnetic field direction and the normal to the film plane from 0 to 90 degrees. The measured voltages present hysteresis loops at low magnetic field even for phase angle=0 deg. From these measurements we can obtain some information regarding the magnetic properties of our samples.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2003
- Accession Number
- ADP014319
Entities
People
- Jenica Neamtu
- Marius Volmer