Ferromagnetic Single-Electron Transistor with RC Gate

Abstract

Ferromagnetic single-electron transistors coupled to the controlling gate potential by the gate resistance and gate capacitance in series are studied quantitatively. In this type of the device, several metastable charge states are possible within the Coulomb blockade range. The enhancement and hysteresis of tunnel magnetoresistance on drain and gate voltages are predicted. Inelastic macroscopic quantum tunneling of charge and existence of several charge states play an important role for the unique behavior of the tunnel magnetoresistance. This implies that RC-coupled ferromagnetic single-electron transistors have a new functionality as novel magnetoresistive nanostructure devices.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2003
Accession Number
ADP014328

Entities

People

  • Jun-ichi Shirakashi
  • Yasushi Takemura

Organizations

  • Yokohama National University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Coupling Circuits
  • Couplings
  • Electrodes
  • Electrons
  • Hysteresis
  • Magnetic Fields
  • Magnetic Materials
  • Materials
  • Quantum Tunneling
  • Relaxation Time
  • Resistance
  • Technical Information Centers
  • Time Intervals
  • Transistors
  • Tunneling
  • Tunnels

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots