Challenges and Opportunities for InP HBT Mixed Signal Circuit Technology

Abstract

Mixed signal circuits based on InP HBTs are being challenged for meeting DoD high bandwidth and dynamic range requirements by aggressively scaled SiGe bipolar technology. This paper presents the challenges that conventional mesa InP HBT technology must overcome (primarily scaling and integration complexity) to maintain its competitive advantage over the silicon alternative. Approaches to overcoming these challenges are identified.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2003
Accession Number
ADP014632

Entities

People

  • John C. Zolper

Organizations

  • Defense Advanced Research Projects Agency

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Accumulators
  • Bipolar Junction Transistors
  • Capacitance
  • Circuits
  • Current Density
  • Digital Circuits
  • Dynamic Range
  • Frequency
  • Heterojunction Bipolar Transistors
  • High Dynamic Range
  • Ion Implantation
  • Layers
  • Logic Gates
  • Materials
  • Resistance
  • Transistors

Readers

  • Defense Acquisition Program Management
  • Semiconductor Device Technology