Channel Recessed 4H-SiC MESFETs with Ft o f14.5GHz and F max of 40GHz
Abstract
Channel recessed 4H-SiC MESFETs have demonstrated excellent small signal characteristics and the effect of SiN4%4 passivation on these devices has been studied in this work. A saturated current of 250-270 mA/mm and a maximum transconductance of 40-45 mS/mm were measured for these devices. The 3-terminal breakdown voltage Vds ranges from 120 V to more than 150 V, depending on gate-drain spacing. 2 x 200 devices with 0.45 micronm gate length show high Ft of 14.5 GHz and F(max) of 40 GHz. After Si3N4 passivation, the output power and PAE were increased by 40% and 16%, respectively, for CW power measurement. Other measurements, such as, the change in surface potential and the dispersion of the drain current make it clear that the passivation of SiC MESFETs reduces the surface effects and enhances the RF power performance by suppressing the instability in DC characteristics.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2002
- Accession Number
- ADP015074
Entities
People
- Christopher I. Thomas
- Goutam Koley
- Ho-young Cha
- Hyungtak Kim
- Lester F. Eastman
Organizations
- Cornell University College of Engineering