Thermal and Trapping Effects in GaN-Based MESFETs
Abstract
RF power performances of GaN-MESFETs are reported using a physics-based model that incorporates dispersion in the output resistance and transconductance due to traps and thermal effects. Calculated I-V characteristics are in excellent agreement with the measured results. Taking thermal effects into account the maximum output power of a O.3 Micronm x lOO micronm GaN MESFET is 22dBm at a power gain of 4.2dB at 4GHz. The corresponding quantities are 27dBm and 6.4dB, respectively if a constant channel temperature of 300K is assumed. At elevated temperatures compression in output power, gain and PAE is less in MESFETs with longer gate lengths.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2002
- Accession Number
- ADP015078
Entities
People
- A. F. Anwar
- Syed S. Islam
Organizations
- University of Connecticut