Design of GaN/A1GaN HEMT Class-E Power Amplifier Considering Trapping and Thermal Effects
Abstract
A microwave class-E power amplifier using AlGaN/GaN HEMT as the switching device is reported by incorporating trapping and thermal effects in the large-signal device model. The load network of the class-E amplifier is designed by considering more realistic exponential decay of the drain current during fall time and finite quality factor of the resonant circuit to incorporate the nonidealities of the active device and passive components. With 9V supply voltage, calculated output power and power conversion efficiency are 89mW and 58% at 1GHz which decrease to 84mW and 54% at 3.8GHz, respectively for a GaN/Al(sub 0.30)Ga(sub 0.70)N HEMT with gate width of 50micrometers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2002
- Accession Number
- ADP015084
Entities
People
- A. F. Anwar
- Syed S. Islan
Organizations
- University of Connecticut