Advanced Large-Signal Modeling of GaN-HEMTs

Abstract

For improved non-linear modeling of AlGaN/GaN high electron mobility transistors, a large- signal model originally developed for GaAs-based devices has been extended by introduction of a thermal sub-circuit to account for self-heating. Thereby, DC output characteristics which typically show negative output conductance at a high dissipating power level are well reproduced. Since self-heating also effects the transconductance, which is related to S(sub 21 at RF conditions, the comparison of broadband S-parameter simulations and measurements revealed significant improvement when using the extended model. First experimental and theoretical investigations on the transient behavior at pulsed conditions are finally presented.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP015086

Entities

People

  • E. Chigaeva
  • I. Dettmann
  • M. Berroth
  • N. Wieser
  • W. Vogel

Organizations

  • University of Stuttgart

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Circuits
  • Conductivity
  • Electron Mobility
  • Equations
  • Equivalent Circuits
  • Frequency
  • High Electron Mobility Transistors
  • High Temperature
  • Measurement
  • Metal-Semiconductor Junctions
  • Power Amplifiers
  • Repetition Rate
  • Resistance
  • Thermal Conductivity
  • Thermal Resistance
  • Transistors

Readers

  • Applied Combinatorial Optimization and Logic Circuit Design.
  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics