Microwave Power SiC MESFETs and GaN HEMTs

Abstract

We have fabricated SiC MESFETs with more than 60 watts of output power at 450 MHz from single 21.6mm gate periphery devices (2.9 W/mm) and 27 wafts of output power at 3 GHz from single 14.4mm SiC MESFET devices (1.9 W/mm). We have also demonstrated more than 6.7 W/mm CW power from 400 micronmeter GaN/AlGaN HEMT devices for X band (10 GHz) applications. These excellent device performances have been attributed to the improved substrate and epitaxial films quality, optimized device thermal management, and enhanced device fabrication technologies. The substrates and epitaxial films from different sources were compared and some showed significant less SiC substrate micropipes confirmed by X-ray topography and epitaxial defects characterized by optical defect mapping.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP015087

Entities

People

  • A. P. Zhang
  • E. B. Kaminsky
  • J. W. Kretchmer
  • L. B. Rowland
  • R. A. Beaupre

Organizations

  • Lockheed Martin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Dispersions
  • Electron Mobility
  • Electrons
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Frequency Response
  • High Electron Mobility Transistors
  • High Temperature
  • Semiconductors
  • Silicon Carbide
  • Three Dimensional
  • Ultrahigh Frequency
  • Wide Bandgap Semiconductors
  • X Band
  • X Rays

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology