Evaluation of Interfaces in Narrow InAs/A1Sb Quantum Wells

Abstract

InAs/AlSb quantum wells may be grown with two types of interfaces: InSb-like and AlAs-like. The interface type refers to the half-monolayer of the well material and half-monolayer of barrier which are in contact The type and quality of the quantum well interface is critical to the ISBT intensity and lineshape and, to a lesser extent position In addition to FTIR spectroscopy of the ISBT, we have performed transmission electron microscopy (TEM) to directly evaluate the quality of the interfaces at the atomic level. In order to evaluate the effects of interface type and quality on ISBT intensity, lineshape, and linewidth, we studied the TEM of a 10 nm QW sample with InSb-InSb interfaces and a 3 nm QW sample with InSb-AlAs interfaces.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP015093

Entities

People

  • Bruce E. Brinson
  • D. C. Larrabee
  • G. A. Khodaparast
  • J. Kono
  • Jiong Tang

Organizations

  • Rice University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Band Structures
  • Conduction Bands
  • Electron Microscopy
  • Energy Bands
  • Energy Levels
  • Intensity
  • Low Temperature
  • Magnification
  • Materials
  • Microscopes
  • Microscopy
  • Monomolecular Films
  • Quantum Wells
  • Short Wavelengths
  • Transitions
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing