Monte Carlo Simulation of InGaAs/InA1As HEMTs with a Quantum

Abstract

In Monte Carlo simulation of high electron mobility transistors (HEMTs), how to position the source and drain contacts will significantly affect the drain current. Unlike many Monte Carlo (MC) simulations of HEM% in the past, in this work, the source and drain contacts are placed on the top of the caps as in the real device instead of on the side adjacent to the channel. In addition, to take quantum effects into consideration, the effective potential approach of quantum correction has been incorporated into our MC simulator. We have found that the simulated drain current is substantially increased compared to that of using the classical potential.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP015095

Entities

People

  • Bo Wu
  • Ting-wei Tang

Organizations

  • University of Massachusetts Amherst

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Anharmonic Oscillators
  • Band Structures
  • Charge Carriers
  • Conduction Bands
  • Electric Fields
  • Electron Density
  • Electrons
  • Energy Bands
  • Equations
  • Experimental Data
  • Low Noise Amplifiers
  • Metal-Semiconductor Junctions
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Simulators
  • Voltage

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Electrical Engineering
  • Electronics Engineering

Technology Areas

  • Microelectronics
  • Quantum Computing