A1GaAsSb-InGaAsSb-GaSb Epitaxial Heterostructures for Uncooled Infrared Detectors

Abstract

Lattice matched n-type AlGaAsSb-InGaAsSb-GaSb heterostructures for uncooled infrared detectors including separate absorption and multiplication avalanche photodiodes (SAM-APD) as well as low-voltage InGaAsSb APDs were grown using inexpensive liquid phase epitaxy. Formation of the pn-junction was performed through difflision of Zn from the vapor phase. Responsivity at lamba =2 micronmeter as high as 3.5 A/W was achieved in InGaAsSb APD biased at 8 V with the avalanche multiplication starting at 6 V. Our calculations have shown that the above parameters can result in a NEP value as low as 1x10(sub-12) W or D* value as high as 2x10(sub 10) cm.Hz(sub1/2)/W at room temperature for 400 micronmeter diameter (200 micrometer diameter photoactive area) APD diodes.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP015106

Entities

People

  • B. Rafol
  • Jeff A. Cox
  • Michael G. Mauk
  • Oleg V. Sulima
  • Sarbajit Datta

Organizations

  • University of Delaware

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Barometric Pressure
  • Crystal Defects
  • Detectors
  • Epitaxial Growth
  • Fabrication
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Low Voltage
  • Measurement
  • P-N Junctions
  • Phase
  • Photodetectors
  • Photodiodes
  • Quantum Efficiency
  • Substrates
  • Vapor Phases
  • Voltage

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy