Performance and Modeling of Antimonide-Based Heterostructure Backward Diodes for Millimeter-Wave Detection
Abstract
Heterostructure backward diodes have been fabricated and characterized for use as zero- bias millimeter-wave detectors. Sensitive detector performance in W-band was achieved by scaling the active area to 1 .5x1 .5 sq.micronmeter through the use of high-resolution I-line stepper lithography. Responsivities of 2450 V/Wand 2341 V/W were measured on-wafer at 95 GHz and 110 GHz, respectively. The detectors exhibit good detection linearity, with 0.8 dB compression measured at an RF power of 4 micronmeterW at 95 GHz. A nonlinear device model based on bias-dependent millimeter-wave s-parameter measurements has been developed. The model is consistent with the measured frequency response, responsivity, and detector compression characteristics. Extrapolation using the model to reduced device dimensions suggests that this device technology should provide appreciable responsivities (> 1000 V/W) at frequencies through 0-band and beyond.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2002
- Accession Number
- ADP015110
Entities
People
- D. H. Chow
- J. N. Schulman
- P. Fay
- S. Thomas Iii.
- Y. K. Boegeman
Organizations
- University of Notre Dame