RF and DC Characteristics of Low-Leakage InAs/A1Sb HFETs
Abstract
InAs/AlSb HFETs with excellent RF and DC properties are reported. The drain currents are 75OmA/mm with peak transconductance gm of 1.1 S/mm. The gate leakage in is below lnA/sq.micronmeter for low gate bias. The threshold voltages of 0.25 micronmeter and 0.5 micronmeter gate-length devices are -2.5 and -1.5 V respectively, indicating short channel effects are present. Small- signal measurements on a 0.25 micronmeter gate-length device show f of 120 GHz and fmax of 100 GHz at drain voltages below O.4V.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2002
- Accession Number
- ADP015119
Entities
People
- B. Brar
- G. Nagy
- Gavin Brent Sullivan
- J. Bergman
- P. Powell
Organizations
- University of California, Santa Barbara