A1GaN/GaN HEMT High-Poeer and Low-Noise Performance at f>20 GHz

Abstract

In this paper, we report on the power and noise performance of AlGaN/GaN HEMTs in the K (18-27 GHz) band. At 20 GHz, a record CW output power of 2 W with an associated gain of 8 (113 and PAE of 33 has been achieved on a 8-finger 0.2 x 500 micronmeter device. Minimum noise figure of 1.4(113 has been achieved on a 0.15 micronmeter x 200 micronmeter device at 26 GHz. The data demonstrate the viability of AlGaN/GaN HEMTs for high-frequency power and LNA applications.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP015121

Entities

People

  • Ioulia Smorchkova
  • M. Barsky
  • M. Wojtowicz
  • R. Sandhu
  • R. Tsai

Organizations

  • University of South Carolina

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Boundaries
  • Chemical Vapor Deposition
  • Continuous Waves
  • Current Density
  • Electrical Engineering
  • Electron Beam Lithography
  • Electron Beams
  • Electronics
  • Frequency
  • Ionization
  • Low Noise
  • Measurement
  • Noise
  • Power Measurement
  • Technical Information Centers
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

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