Impact Ionization in High Performance A1GaN/GaN HEMTs

Abstract

We report compelling evidence of impact ionization in high-performance AlGaN/GaN HEMTs. Relevant to the present paper, these devices also show excellent low-leakage DC properties that contain signatures of impact ionization in the output and sub-threshold characteristics. Temperature and bias dependent data are presented to support the identification of impact ionization in the devices.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP015129

Entities

People

  • B. Brar
  • K. Boutros
  • R. E. Dewames
  • R. Shealy
  • V. Tilak

Organizations

  • Cornell University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Band Structures
  • Conduction Bands
  • Electron Beams
  • Electron Holes
  • Electrons
  • Energy Bands
  • High Gain
  • Ionization
  • Materials
  • Mean Free Path
  • Measurement
  • Metal-Semiconductor Junctions
  • Power Amplifiers
  • Technical Information Centers
  • Valence Bands

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design