Photoelectron Emission and Secondary Electron Emission Characteristics of Cesiated p-type GaN

Abstract

The emission characteristics of a cesiated p-type GaN sample are examined as a function of surface treatment, time following cesiation, and sample heating. The yield and energy distribution of both photoemitted electrons and secondary electrons are examined and correlated with the GaN surface properties.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2006
Accession Number
ADP022629

Entities

People

  • D. W. Feldman
  • J. E. Yater
  • J. L. Shaw
  • K. L. Jensen
  • N. Moody
  • P. G. O'shea

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Alkali Metals
  • Electron Emission
  • Electron Energy
  • Electronics
  • Electrons
  • Emission
  • Energy
  • Lasers
  • Materials
  • Photoelectric Emission
  • Photoelectrons
  • Photoexcitation
  • Quantum Efficiency
  • Secondary Emission
  • Semiconductors
  • Surface Properties
  • Vacuum Electronics

Readers

  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics