Field Effect Transistor in Nanoscale
Abstract
The objective of this research is to develop reliable methods for calculating the ultimate down-scaling that allows the conducting channel in Field Effect Transistors (FET) to be designed.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 23, 2016
- Source ID
- FA23861510007
Entities
People
- Swapan Pati
Organizations
- Air Force Office of Scientific Research
- Jawaharlal Nehru Centre for Advanced Scientific Research
- United States Air Force