Innovative Ge Quantum Dot Functional Sensing and Metrology Devices
Abstract
This project s approach is explore cutting-edge fabrication technologies for producing innovative Ge quantum dot (QD) sensing and metrology devices, including single-electron transistors (SETs) for single-charge detection and spatial thermometry as well as QD-array transistors for broadband photosensing. Dr. Li and her team will engage in a deep understanding of electrically- and optically-driven charge transports within mesoscopic QDs and related nonlinear electrical/optical properties, which are crucial for QD sensing and metrology devices from functional prototypes into real application. Access to wide-ranging applications in logics, computing, photonics, and metrology has created requirement to employ QDs for primary metrology devices is strong in light of their inherent, peculiar Coulomb blockade (CB) and quantum confinement effects (QCEs) inducing size-tunable electronic structures, nonlinear optical properties, and strain engineering. The developed designer QD-SET, the understanding of charge s and exiton s Coulomb interactions, and the QD-SET thermometry in the 1st year will be an extension to the realm of QD charge and photo detectors in the 2nd year.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 23, 2016
- Source ID
- FA23861514025
Entities
People
- Pei-wen Li
Organizations
- Air Force Office of Scientific Research
- National Chiao Tung University
- United States Air Force