GeSn Based Near and Mid Infrared Heterostructure Detectors

Abstract

The objective of this research is to advance the basic science behind using GeSn heterostructures in silicon-based photonic devices. Such devices would operate in near and mid IR spectral ranges and form the foundation for IR photonics that enable on-chip systems. As a group-IV material, on-chip systems based on the GeSn materials would have a crucial added advantage of being compatible with the mature CMOS processing allowing for monolithic integration of the photonics with Si electronics on a Si platform.

Document Details

Document Type
DoD Grant Award
Publication Date
Jul 15, 2016
Source ID
FA23861614070

Entities

People

  • Hung Hsiang Cheng

Organizations

  • Air Force Office of Scientific Research
  • National Taiwan University
  • United States Air Force

Tags

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics