Single Quantum Emitters based on Strained Quantum Dots in Two-dimensional Semiconductors
Abstract
Quantum confinement in atomically-thin transition-metal dichalcogenides (TMDs) has been explored recently for single quantum emitters based on naturally occurring or artificially created defects. In this proposal, we aim to advance our understanding of artificial quantum emitters of atomically-thin TMDs on their emission properties by investigating the effect of deterministic straining and confinement, as opposed to unintentional defects. We propose that mechanical straining and confinement in monolayer TMDs are viable solutions to produce precisely controlled single quantum emitters. In our system, localized (or confined) excitons arise from a confinement potential caused by a local strain gradient. In addition, the two-dimensional (2D) nature of a single quantum emitter confined to an atomically-thin material can greatly enhance the photon-extraction efficiency. Our collaborative team has demonstrated that localized deformation of 2D materials including WSe2 and MoS2 monolayers can lead to controlled straining and confinement of excitons in TMDs. We predict that as the scale of deformation approaches that of exciton Bohr radius, the strained and confined 2D excitons will result in an efficient, single-photon source based on strained 2D semiconductors for next generation, scalable quantum cryptography.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 11, 2017
- Source ID
- FA23861714071
Entities
People
- SungWoo Nam
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Illinois Urbana–Champaign