Growth and Mechanism Study of Wide-Bandgap Semiconductor Nanostructures
Abstract
The growth of regularly-patterned GaN nanorod (NR) arrays based on the pulsed growth methodof metalorganic chemical vapor deposition can provide us with three-dimensional GaNnanostructures of high crystal quality for the applications of light-emitting device, verticalelectronics device, and detector. Also, transparent, conductive, highly Ga-doped ZnO (GaZnO)nanoneedles (NNs) grown with the low-temperature vapor-liquid-solid process of molecular beamepitaxy by using Ag nanoparticles as growth catalyst can find many applications in the areas oflight emission, plasmonics, and photovoltaic devices. Before device applications can beimplemented, various fundamental properties of GaN NR and GaZnO NN need to be carefullystudied, including the growth mechanisms of single- and multi-section GaN NRs, thesimultaneous growths of disk-like and core-shell InGaN/GaN quantum wells on a GaN NR, thesurface plasmon resonance behaviors of GaZnO nanostructures, the growth orientation andpolarity of a GaZnO NN, particularly those of GaZnO NNs on different templates and differentcrystalline facets of a template. In this project, we will first investigate the aforementionedfundamental nanomaterial and nanophotonics issues. Then, pioneering fabrications of certaindevices based on the results of the aforementioned investigations will be implemented, includinglight-emitting diode, solar cell, and field emission device. In this research, we will be cooperatingwith Dr. Kent Averett of AFRL/RXAP, Wright-Patterson Air Force Base.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 09, 2018
- Source ID
- FA23861714087
Entities
People
- Chih-Chung Yang
Organizations
- Air Force Office of Scientific Research
- National Taiwan University
- United States Air Force